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| (R) BC394 EPITAXIAL PLANAR NPN s HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb 25 o C at T C 25 o C Storage Temperature Max. Operating Junction Temperature Value 180 180 6 100 0.4 1.4 -55 to 175 175 Unit V V V mA W W o o C C December 2002 1/5 BC394 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 107.1 375 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 100 V V CB = 100 V I C = 100 A T C = 150 o C 180 Min. Typ. Max. 50 50 Unit nA A V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector-Base Capacitance I C = 10 mA 180 V I E = 100 A 6 V V CE(sat) V BE(sat) h FE C CBO I C = 10 mA I C = 50 mA I C = 10 mA I C = 50 mA I C = 1 mA I C = 10 mA IE = 0 I B = 1 mA I B = 5 mA I B = 1 mA I B = 5 mA V CE = 10 V V CE = 10 V f = 1 MHz 30 0.2 0.4 0.75 0.85 85 100 5 0.3 0.9 V V V V VCB = 10 V pF Pulsed: Pulse duration = 300 s, duty cycle 1 % 2/5 BC394 DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Transition Frequency 3/5 BC394 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch G I H E F D A L C B 0016043 4/5 BC394 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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